Infrared absorption of nitrogen–oxygen complex in silicon-Reference-Cited by-同舟云学术

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Infrared absorption of nitrogen–oxygen complex in silicon

Published:2000-03 Issue:2-3 Volume:72 Page:121-123
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Yang Deren,Ma Xiangyang,Fan Ruixin,Li Dongsheng,Zhang Jinxin,Li Liben,Que Duanlin,Sumino Koji

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals

2. Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals

3. Semiconducter Silicon, ECS;Sumino,1981

4. Deren Yang, Duanlin Que, Koji Sumino, J. Appl. Phys. 77 (1995) 943.

5. Deren Yang, Ruixin Fan, Liben Li, Duanlin Que Koji Sunimo, J. Appl. Phys. 80 (1996) 1493.

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1. Nitrogen-Related Defects in Crystalline Silicon;Applied Sciences;2024-02-18

2. Mechanical strength of Czochralski silicon crystal: Effects of co-doping germanium and nitrogen;Acta Physica Sinica;2021

3. Effects of co-doping nitrogen and germanium on dislocation gliding in Czochralski silicon: Implication for improving mechanical strength;Journal of Applied Physics;2020-12-21

4. Impurity engineering of Czochralski silicon;Materials Science and Engineering: R: Reports;2013-01

5. Nitrogen-doped Czochralski silicon treated in rapid thermal process;Materials Science and Engineering: B;2006-10

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