Atomic structure and electronic states of nickel and copper silicides in silicon-Reference-Cited by-同舟云学术

Atomic structure and electronic states of nickel and copper silicides in silicon

Published:2000-03 Issue:2-3 Volume:72 Page:80-86
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schröter W.,Kveder V.,Seibt M.,Ewe H.,Hedemann H.,Riedel F.,Sattler A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. M. Seibt, in: B.O. Kolbesen, P. Stallhofer, C. Clays, F. Tradiff (Eds.), Crystalline Defects and Contamination: their Impact and Control in Device Manufacturing II, The Electrochem. Soc. PV97-22, pp. 259.

2. Structural and Electrical Properties of Metal Silicide Precipitates in Silicon

3. Precipitation behaviour of nickel in silicon

4. Formation and Properties of Copper Silicide Precipitates in Silicon

5. M. Seibt, in: H.R. Huff, K.G. Barraclough, Y.I. Chikawa (Eds.), Semiconductor Silicon 1990, The Electrochem. Soc., Pennington, 1990, pp. 663.

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