The formation mechanism of grown-in defects in CZ silicon crystals based on thermal gradients measured by thermocouples near growth interfaces-Reference-Cited by-同舟云学术

The formation mechanism of grown-in defects in CZ silicon crystals based on thermal gradients measured by thermocouples near growth interfaces

Published:2000-04 Issue:1-3 Volume:73 Page:16-29
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Abe Takao

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. G. Watkins, Defects and Diffusion in Silicon Processing, in: T. Diaz, de la Rubia, S. Coffa, P.A. Stalk, C.S. Rafferty, (Eds.), MRS Symposium, vol. 469, Warrendale, PA, 1997, p. 139.

2. Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound Semiconductors

3. Etch Pits Observed in Dislocation-Free Silicon Crystals

4. VACANCY CLUSTERS IN DISLOCATION‐FREE SILICON

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