Resonant cavity light-emitting diodes at 660 and 880 nm-Reference-Cited by-同舟云学术

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Resonant cavity light-emitting diodes at 660 and 880 nm

Published:2000-05 Issue:1-3 Volume:74 Page:165-167
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Vilokkinen V,Sipilä P,Melanen P,Saarinen M,Orsila S,Dumitrescu M,Savolainen P,Toivonen M,Pessa M

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

2. High brightness visible (660 nm) resonant-cavity light-emitting diode

3. Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes

4. All-solid-source molecular beam epitaxy for growth of III–V compound semiconductors

5. Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE grown microcavities based on selenium and tellurium compounds;Journal of Crystal Growth;2014-09

2. MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots;Acta Physica Polonica A;2012-12

3. High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications;Journal of Lightwave Technology;2009-09

4. Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm;Journal of Semiconductors;2009-04-29

5. Characterization of (Al)GaAs/AlAs distributed Bragg mirrors grown by MBE and LP MOVPE techniques;Journal of Crystal Growth;2008-08

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