High-rate electron cyclotron resonance etching of GaAs via holes
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Gallium Arsenide Processing Techniques;Williams,1985
2. Reactive ion etching of via holes for GaAs high electron mobility transistors and monolithic microwave integrated circuits using Cl2/BCl3/Ar gas mixtures
3. Dry etching of via connections for GaAs monolithic microwave integrated circuits fabrication
4. Via hole process for GaAs monolithic microwave integrated circuit using two-step dry etching
5. Dry etching of through substrate via holes for GaAs MMIC’s
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