Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
3. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
4. GaN Growth Using GaN Buffer Layer
5. Activation energies of Si donors in GaN
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2. Nondestructive measurement of homoepitaxially grown GaN film thickness with Fourier transform infrared spectroscopy;JPN J APPL PHYS;2017
3. Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals;Journal of Crystal Growth;2015-12
4. Improved the light extraction efficiency of GaN vertical light-emitting diodes using 3D sphere-like arrays;Optical and Quantum Electronics;2015-05-16
5. Synthesis of hexagonal GaN nanoplates via a convenient solid state reaction;Journal of Alloys and Compounds;2015-01
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