2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots-Reference-Cited by-同舟云学术

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2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots

Published:1997-12 Issue:1-3 Volume:50 Page:8-11
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Daudin B,Widmann F,Feuillet G,Adelmann C,Samson Y,Arlery M,Rouvière J.L

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

2. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

3. G. Feuillet, F. Widmann, B. Daudin, J. Schuler, J.L. Rouvière, M. Arlery, O. Briot, N. Pelekanos, Mater. Sci. Eng. B50 (1997) 2/3 (this issue).

4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

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