Carbon-vacancy related defects in 4H- and 6H-SiC
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. Radiation induced defects in CVD-grown 3C-SiC
2. Point defects in silicon carbide
3. Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons
4. ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
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1. H+ implantation induced defects distribution in 4H-SiC single crystal film fabricated by Crystal-Ion-Slicing and its effects on electrical behavior: A multiple characterization study;Applied Surface Science;2024-10
2. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01
3. Deep levels related to the carbon antisite–vacancy pair in 4H-SiC;Journal of Applied Physics;2021-08-14
4. Charge state control of the silicon vacancy and divacancy in silicon carbide;Journal of Applied Physics;2021-06-01
5. Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC;Journal of Crystal Growth;2020-02
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