Author:
Hugonnard-Bruyère E.,Lauer V.,Guillot G.,Jaussaud C.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Silicon carbide on insulator formation by the Smart-Cut® process;DiCioccio;Electr. Lett.,1996
2. Silicon carbide on insulator formation by the Smart-Cut® process;DiCioccio;Mater. Sci. Eng.,1997
3. V.S. Ballandovich, Transient spectroscopy studies of electron irradiated 6H–SiC, ICSCIII-N’97, Stockolm, 1997, pp. 616–619.
4. Characterization of electrically active deep level defects in 4H and 6H–SiC;Doyle;Diamond Related Mater.,1997
5. J.P. Doyle, Copper Germanide Schottky Contacts to Silicon and Electrically Active Defects in n-type 6H–SiC and 4H–SiC Epitaxial Layers, PhD Thesis, Stockholm 1997.
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