GaN-based laser diode with focused ion beam-etched mirrors-Reference-Cited by-同舟云学术

GaN-based laser diode with focused ion beam-etched mirrors

Published:1999-05 Issue:1-3 Volume:59 Page:382-385
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ambe C.,Takeuchi T.,Katoh H.,Isomura K.,Satoh T.,Mizumoto R.,Yamaguchi S.,Wetzel C.,Amano H.,Akasaki I.,Kaneko Y.,Yamada N.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

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2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Shortest wavelength semiconductor laser diode

4. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

5. G.E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, M. Leonard, H.S. Kong, H. Dieringer, C. Carter, J. Edmond, Device Research Conference IV-B-8 (1997).

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