Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence-Reference-Cited by-同舟云学术

Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence

Published:1999-07 Issue: Volume:61-62 Page:151-154
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zhang J,Ellison A,Henry A,Linnarsson M.K,Janzén E

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

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3. Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

4. SiC Dopant Incorporation Control Using Site-Competition CVD

5. A Model of Silicon Carbide Chemical Vapor Deposition

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