Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide
3. Homoepitaxial VPE Growth of SiC Active Layers
4. Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation
5. Growth of SiC by ?Hot-Wall? CVD and HTCVD
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