Growth of 4H-SiC from liquid phase
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Crystal Growth of GaAs from Ga by a Traveling Solvent Method
2. Study of the silicon carbide preparation in the silicon–scandium–carbon system
3. Phases in rapidly cooled scandium-silicon samples
4. Ga-bound excitons in 3C-, 4H-, and 6H-SiC
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and Characterization of Silicon Carbide Crystals;Springer Handbook of Crystal Growth;2010
2. Silicon Carbide Crystals — Part I;Crystal Growth Technology;2003
3. Silicon carbide grown by liquid phase epitaxy in microgravity;Journal of Materials Research;1998-07
4. Growth of SiC from the liquid phase: wetting and dissolution of SiC;Diamond and Related Materials;1997-08
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