Surface characterization of GaN and AlGaN layers grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Nature of native oxide on GaN surface and its reaction with Al
2. X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride
3. Oxidation study of GaN using x-ray photoemission spectroscopy
4. Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry
5. Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications
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1. Ions Adsorbed at Amorphous Solid/Solution Interfaces Form Wigner Crystal-like Structures;ACS Nano;2023-12-20
2. Impact of nitride and temperature treatment for AlGaN thin films;Bulletin of Materials Science;2022-08-08
3. On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines;IEEE Transactions on Electron Devices;2019-06
4. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09
5. Quantitative study for surface properties of AlGaN epi-layers by ARXPS;The European Physical Journal Applied Physics;2015-10-30
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