Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
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1. Formation of novel core–shell and tadpole-like structures in the direct nitridation of aluminum powder by N2 and NH3;Journal of Alloys and Compounds;2013-01
2. Morphology and composition of GaN films grown by cyclic-pulsed laser deposition;Vacuum;2007-08
3. Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition;Applied Physics Letters;2002-05-06
4. Laser-induced reactive epitaxy of binary and ternary group III nitride heterostructures;Applied Surface Science;2002-01
5. Layer-by-Layer Growth of GaN on Sapphire by Low Temperature Cyclic Pulsed Laser Deposition / Nitrogen RF Plasma;MRS Proceedings;2002
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