Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers.-Reference-Cited by-同舟云学术

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Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers.

Published:2001-05 Issue:1-3 Volume:82 Page:245-247
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kim Taek,Martin R.W.,Watson I.M.,Dawson M.D.,Krauss T.F.,Marsh J.H.,De La Rue R.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Blue InGaN-based laser diodes with an emission wavelength of 450 nm

2. T. Someya, K. Tachibana, J. Lee, T. Kamiya, Y. Arakawa, Jpn. J. Appl. Phys., 37, 1998, L1424; T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, Y. Arakawa, Science, 285, 1999, 1905.

3. Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

4. A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser

5. Refractive index of AlGaInN alloys

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3. Influence of patterned TiO 2 /SiO 2 dielectric multilayers for back and front mirror facets on GaN-based laser diodes;Chinese Physics B;2008-09

4. GaN microcavity structure with dielectric distributed Bragg reflectors fabricated by using a wet-chemical etching of a (111) Si substrate;Applied Physics Letters;2006-07-24

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