Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation-Reference-Cited by-同舟云学术

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Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation

Published:2001-03 Issue:1-3 Volume:80 Page:193-196
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Venger Ye.F.,Semenova G.N.,Korsunskaya N.E.,Semtsiv M.P.,Borkovskaya L.V.,Sharibaev M.,Braylovsky Ye.Yu.,Sadofyev Yu.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Defect-induced emission band in CdTe

2. Resonant excitation of intrinsic and shallow trap luminescence in MOVPE grown ZnTe layers

3. Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation between the x value and qualities of Cd1−xZnxTe crystal grown by vertical Bridgman method;Materials Science and Engineering: B;2004-03

2. Cd1−xZnxTe: Growth and characterization of crystals for X-ray and gamma-ray detectors;Progress in Crystal Growth and Characterization of Materials;2003-01

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