Resonant excitation of intrinsic and shallow trap luminescence in MOVPE grown ZnTe layers-Reference-Cited by-同舟云学术

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Resonant excitation of intrinsic and shallow trap luminescence in MOVPE grown ZnTe layers

Published:1992-06 Issue:1-4 Volume:52 Page:41-53
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Wagner H.P.,Lankes S.,Wolf K.,Lichtenberger D.,Kuhn W.,Link P.,Gebhardt W.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference27 articles.

1. Cubic contributions to the spherical model of shallow acceptor states

2. Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb

3. Investigation of strain in metalorganic vapor‐phase epitaxy grown ZnTe layers by optical methods

4. High Pressure Science and Technology;Lindner,1990

5. Shallow donor levels of InSb in a magnetic field

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