1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
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3. Performance comparison of strained InGaNAs/GaAs QW laser diodes grown by MOVPE;Mereuta;Electronic Letters,2000
4. GaAsSbN: a new long band gap material on GaAs;Ungaro;Electronic Letters,1999
5. Multidimensional quantum-well laser and temperature dependance of its threshold current;Arakawa;Applied Physic Letters,1982
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature;Japanese Journal of Applied Physics;2014-01-01
2. Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3μm;Journal of Crystal Growth;2002-02
3. Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots;Applied Physics Letters;2001-10
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