Growth and characterisation of self-assembled cubic GaN quantum dots-Reference-Cited by-同舟云学术

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Growth and characterisation of self-assembled cubic GaN quantum dots

Published:2001-05 Issue:1-3 Volume:82 Page:212-214
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Adelmann C,Martinez Guerrero E,Chabuel F,Simon J,Bataillou B,Mula G,Dang Le Si,Pelekanos N.T,Daudin B,Feuillet G,Mariette H

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum Dots

2. Self‐assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant

3. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

4. From visible to white light emission by GaN quantum dots on Si(111) substrate

5. Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect

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1. Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide;Journal of Applied Physics;2020-01-21

2. Effects of temperature and nitradition on phase transformation of GaN quantum dots grown by droplet epitaxy;Surface and Coatings Technology;2019-01

3. Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix;Journal of Applied Physics;2017-02-07

4. Electronic Structure and Magnetic Properties of Zinc-Blende Co-Doped GaN with N Vacancies;Journal of Superconductivity and Novel Magnetism;2012-10-24

5. Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control;Nanoscale Research Letters;2011-12

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