Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix
Author:
Affiliation:
1. Physics Department, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
2. Université de Lorraine, LEMTA UMR 7563, CNRS F-54506 Vandoeuvre Les Nancy, France
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975200
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2. III-nitride semiconductors for intersubband optoelectronics: a review
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4. Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides
5. Semiconductor Clusters, Nanocrystals, and Quantum Dots
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