Annealing behavior of luminescence from erbium-implanted GaN films-Reference-Cited by-同舟云学术

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Annealing behavior of luminescence from erbium-implanted GaN films

Published:2001-04 Issue:1-3 Volume:81 Page:127-131
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zavada J.M.,Ellis C.J.,Lin J.Y.,Jiang H.X.,Seo J.T.,Hömmerich U.,Thaik M.,Wilson R.G.,Grudowski P.A.,Dupuis R.D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN

2. Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

3. Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

4. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm

5. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of magnetron-sputtered Er-doped AlN films grown under negative substrate bias;Applied Surface Science;2014-07

2. Theoretical investigation of Er-O co-doping in hexagonal GaN;MRS Proceedings;2011

3. Optical activation of Eu ions in nanoporous GaN films;Journal of Applied Physics;2006-05-15

4. Study of infrared luminescence from Er-implanted GaN films;Journal of Crystal Growth;2004-08

5. Influence of O and C co-implantation on the lattice site of Er in GaN;Applied Physics Letters;2004-05-24

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