Study of As precipitates in LEC SI–GaAs wafer by Raman probe-Reference-Cited by-同舟云学术

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Study of As precipitates in LEC SI–GaAs wafer by Raman probe

Published:2000-06 Issue:2-3 Volume:75 Page:139-142
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Zhang Fengyi,Tu Hailing,Wang Yonghong,Qian Jiayu,Wang Haitao,Wang Jing,Song Ping

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Identification of AsGaantisites in plastically deformed GaAs

2. Etching of Dislocations on the Low‐Index Faces of GaAs

3. Investigation of changes of As precipitates in semi-insulating GaAs crystals at several temperatures by infrared light scattering tomography

4. Phonon confinement in GaAs by defect formation studied by real-time Raman measurements

5. The Conference on Chinese GaAs and Related Compounds, Kunming;Ma,1993

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