Microstructure and electrical characteristics of Cr–Si–Ni films deposited on glass and Si (100) substrates by RF magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Cr-Ni-Si Ternary Phase Diagram Evaluation;MSI Eureka;2022-04-27
2. Effect of pretreatment on Al2O3 substrate by depositing Al2O3 film on the properties of Ni–Cr–Si based thin film resistor;Materials Chemistry and Physics;2019-08
3. Mechanism on M (M Ni, Mo, Ni Mo) as deep level impurity reducing the TCR of Si-rich Cr Si resistive films;Superlattices and Microstructures;2017-09
4. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetron sputtering;Journal of Semiconductors;2017-06
5. Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors;Nanomaterials;2016-02-25
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