Microstructure and electrical characteristics of Cr–Si–Ni films deposited on glass and Si (100) substrates by RF magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of pretreatment on Al2O3 substrate by depositing Al2O3 film on the properties of Ni–Cr–Si based thin film resistor;Materials Chemistry and Physics;2019-08
2. Mechanism on M (M Ni, Mo, Ni Mo) as deep level impurity reducing the TCR of Si-rich Cr Si resistive films;Superlattices and Microstructures;2017-09
3. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetron sputtering;Journal of Semiconductors;2017-06
4. Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors;Nanomaterials;2016-02-25
5. CrSi(O,N)-based cermet-like material for high-ohmic thin film resistor applications;physica status solidi (a);2015-12-02
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