Author:
Dimitrakis P.,Kapetanakis E.,Normand P.,Skarlatos D.,Tsoukalas D.,Beltsios K.,Claverie A.,Benassayag G.,Bonafos C.,Chassaing D.,Carrada M.,Soncini V.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis
2. A. Claverie, M. Carrada, G. Benassayag,̄ C. Bonafos, D. Chassaing, P. Normand, D. Tsoukalas, V. Soncini, Materials Science and Engineering B, this volume (presented at E-MRS 2002, symposium S).
3. Evolution and control of the structure of a SiO2/semiconductor nanoelectronics material
4. Electronic states at SiSiO2 interface introduced by implantation of Si in thermal SiO2
5. Small silicon memories: confinement, single-electron,. and interface state considerations
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