Characterization of carrier lifetime and diffusivity in 4H–SiC using time-resolved imaging spectroscopy of electroluminescence
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
2. Growth of SiC by ?Hot-Wall? CVD and HTCVD
3. Free Carrier Diffusion in 4H-SiC
4. Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC
5. Auger recombination in 4H-SiC: Unusual temperature behavior
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps;Journal of Applied Physics;2023-07-19
2. Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO<sub>2</sub>-Interface Defects;Materials Science Forum;2023-06-05
3. Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers;Diamond and Related Materials;2019-02
4. Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes;Optical and Quantum Electronics;2017-07-14
5. Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias;Materials Science Forum;2007-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3