Polytype determination at the SiC–SiO2 interface by internal electron photoemission scattering spectroscopy-Reference-Cited by-同舟云学术

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Polytype determination at the SiC–SiO2 interface by internal electron photoemission scattering spectroscopy

Published:2003-09 Issue:1-3 Volume:102 Page:308-312
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Afanas'ev V.V.,Stesmans A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. SiC devices: physics and numerical simulation

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. Advances in SiC MOS Technology

4. Model Systems for Metal-Ceramic Interface Studies

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