Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of GaN layers on SiC/Si(111) substrate by molecular beam epitaxy

Published:2002-05 Issue:1-3 Volume:93 Page:172-176
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ristic J,Sánchez-Garcı́a M.A,Calleja E,Pérez-Rodrı́guez A,Serre C,Romano-Rodrı́guez A,Morante J.R,Koegler V.R,Skorupa W

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

2. Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film

3. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/

4. SiC rapid thermal carbonization of the (111)Si semiconductor‐on‐insulator structure and subsequent metalorganic chemical vapor deposition of GaN

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1. Ion beam synthesis of SiC on Si toward the radiation damage free limit;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-04

2. THE STUDY OF Al0.29Ga0.71N-BASED SCHOTTKY PHOTODIODES GROWN ON SILICON BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;Modern Physics Letters B;2013-04-22

3. Raman and TEM characterization of high fluence C implanted nanometric Si on insulator;Applied Surface Science;2012-07

4. The investigation of Al[sub 0.29]Ga[sub 0.71]N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE;AIP Conference Proceedings;2012

5. Structural Characterization of Si1-xCx Nanolayers Synthesized by C Implantation into SiO2/Si;ECS Transactions;2011-09-15

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