Rapid thermal oxidation of epitaxial SiGe thin films
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Preparation and properties of the GeSi-oxide system
2. Oxidation of silicon–germanium alloys. I. An experimental study
3. A diffusional model for the oxidation behavior of Si1−xGex alloys
4. Formation of stacking faults and enhanced diffusion in the oxidation of silicon
5. X-ray photoelectron spectra of low temperature plasma anodized Si0.84Ge0.16 alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111);Journal of Applied Physics;2024-03-19
2. Germanium catalyzed vapor–liquid–solid growth and characterization of amorphous silicon oxide nanotubes: comparison to the growth of its nanowires;SN Applied Sciences;2018-12-07
3. Optical property investigation of SiGe nanocrystals formed by electrochemical anodization;Applied Surface Science;2011-10
4. Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation;Applied Physics Letters;2009-01-26
5. THE OXIDATION AND THE ELECTRICAL PROPERTIES OF Ni–Cr THIN FILM AFTER RAPID THERMAL ANNEALING;International Journal of Modern Physics B;2007-10-20
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3