Dielectric properties of La-modified antiferroelectric PbZrO3 thin films
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Antiferroelectric Ceramics with Field-Enforced Transitions: A New Nonlinear Circuit Element
2. Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric PbZrO3 thin films
3. Charge release of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films
4. Field‐induced phase switching and electrically driven strains in sol‐gel derived antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3thin layers
5. Piezoelectric properties of sol‐gel‐derived ferroelectric and antiferroelectric thin layers
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1. Preparation and Energy Storage Properties of A-site La/Sr Co-doped PbZrO3 Thin Films;Journal of Inorganic Materials;2024
2. Ultrahigh Energy Density of Antiferroelectric PbZrO3‐Based Films at Low Electric Field;Advanced Functional Materials;2023-07-02
3. Full Antiferroelectric Performance and GMR Effect in Multiferroic La0.75Ba0.25Fe12O19 Ceramic;Applied Sciences;2023-05-05
4. Energy storage properties of (Pb, Sm, La)(Zr, Sn, Ti)O-3 antiferroelectric ceramics with SrTiO3 modified;Journal of Materials Science: Materials in Electronics;2022-02-19
5. A comprehensive review on the progress of lead zirconate-based antiferroelectric materials;Progress in Materials Science;2014-06
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