Author:
Tezuka T,Sugiyama N,Takagi S
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
2. J. Welser, J.L. Hoyt, S. Takagi, J.F. Gibbons, IEDM Tech. Dig. (1994) 373.
3. T. Mizuno, S. Takagi, N. Sugiyama, J. Koga, T. Tezuka, K. Usuda, T. Hatakeyama, A. Kurobe, A. Toriumi, IEDM Tech. Dig. (1999) 934.
4. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
5. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s
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