Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs-Reference-Cited by-同舟云学术

Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs

Published:2002-04 Issue: Volume:91-92 Page:29-32
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Steinegger Th.,Gründig-Wendrock B.,Baeumler M.,Jurisch M.,Jantz W.,Niklas J.R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Annealing behavior of deep‐level defects in semi‐insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping

2. The Electrical Characterisation of Semiconductors: Majority Carriers and Electron States;Blood,1992

3. Th. Steinegger, Defect Engineering, kontrollierte Einflussnahme auf anwendungsbezogene Defekte in SI-LEC-GaAs unter Berücksichtigung von für Bauelemente relevanten Substratparametern, Doctoral Thesis, Technical University Bergakademie Freiberg, Germany, 2001.

4. T. Richter, Elektrische Charakterisierung des EL6-Defektes in Galliumarsenide, Doctoral Thesis, Technical University Bergakademie Freiberg, Germany, 1999.

5. B. Gründig, Mikrowellen detektierte PICTS an Störstellen in GaAs, Master Thesis, Technical University Bergakademie Freiberg, Germany, 2001.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Explanation of positive and negative PICTS peaks in SI-GaAs;Journal of Materials Science: Materials in Electronics;2008-02-05

2. Contact-free investigation of the EL2-defect in the surface of GaAs wafers;The European Physical Journal Applied Physics;2004-07

3. Topography of Defect Parameters on Si and GaAs Wafers;Advanced Engineering Materials;2004-07