Cathodoluminescence characterization of a compound semiconductornative dielectric interface-Reference-Cited by-同舟云学术

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Cathodoluminescence characterization of a compound semiconductornative dielectric interface

Published:1997-02 Issue:1-3 Volume:44 Page:139-142
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Berchenko N.N.,Izhnin I.I.,Savchyn V.P.,Stakhira J.M.,Voitsekhovskii A.V.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Growth mechanisms of anodic oxide and sulfide films on HgCdTe

2. Surface characterization of Hg0.7Cd0.3Te native oxides

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1. Photoluminescence spectra of HgCdTe structures with single quantum wells;Journal of Optical Technology;2016-04-01

2. Time-of-Flight Secondary Ion Mass Spectroscopy with Bismuth Primary Ions of Clean and Air-Exposed Surfaces of Tellurium;European Journal of Mass Spectrometry;2014-12

3. Composition of PbTe oxides obtained by different methods;Materials Science in Semiconductor Processing;2014-05

4. Silicon carbide nanowires: synthesis and cathodoluminescence;physica status solidi (b);2009-11-17

5. Cathodoluminescence of the a-C:N films deposited by a filtered cathodic arc plasma system;Diamond and Related Materials;2005-01

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