Characterization of 3C-SiC doped by nitrogen implantation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
2. Nitrogen implantation in (100)‐β‐SiC layers grown on Si substrate
3. Ion Implantation Effects of Nitrogen, Boron, and Aluminum in Hexagonal Silicon Carbide
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2. 1300°C Annealing of 1 × 1020 cm−3 Al+ Ion Implanted 3C-SiC/Si;ECS Journal of Solid State Science and Technology;2019
3. Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-09
4. Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation;Materials Science and Engineering: B;2010-07
5. Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate;Materials Science Forum;2007-09
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