Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference31 articles.
1. MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junction
2. Atomic level control in gas source MBE growth of cubic SiC
3. Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy
4. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy
5. Epitaxial growth of SiC thin films on Si-stabilized α-SiC(0001) at low temperatures by solid-source molecular beam epitaxy
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1. Characterization of Silicon Carbide Thin Films Obtained Via Sublimation of a Solid Polymer Source Using Polymer-Source CVD Process;MRS Proceedings;2007
2. Structural and electronic properties of the SiC (100) surfaces;Brazilian Journal of Physics;2006-06
3. Ab initio calculation of the SiC (100) surfaces phonon dispersion;Microelectronics Journal;2005-11
4. Ab initio calculation of the structural and electronic properties of the SiC (100) Surfaces;Microelectronics Journal;2005-11
5. Fabrication of a CMOS compatible pressure sensor for harsh environments;Journal of Micromechanics and Microengineering;2004-08-11
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