Optical and electro-optical investigation of low-temperature grown GaAs-Reference-Cited by-同舟云学术

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Optical and electro-optical investigation of low-temperature grown GaAs

Published:1997-02 Issue:1-3 Volume:44 Page:316-319
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Dankowski S.U.,Kiesel P.,Ruff M.,Streb D.,Tautz S.,Keil U.D.,Sørensen C.B.,Knüpfer B.,Kneissl M.,Döhler G.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. High-resolution x-ray analysis of strain in low-temperature GaAs

2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of GaAs1−xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates;Semiconductor Science and Technology;2018-11-13

2. Resonant cavities for efficient LT-GaAs photoconductors operating at λ = 1550 nm;APL Photonics;2016-10

3. Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation;Journal of Applied Physics;2009-09

4. Optical absorption in random media: Application toGa1−xMnxAsepilayers;Physical Review B;2001-07-17

5. Detection of picosecond electrical pulses using the intrinsic Franz–Keldysh effect;Applied Physics Letters;2001-06-25

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