High-resolution x-ray analysis of strain in low-temperature GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.8911/fulltext
Reference11 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
3. Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C
4. Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP
5. High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature;Physical Review Materials;2018-10-16
2. Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenide;physica status solidi (a);2005-11-17
3. Magnetic interactions and transport in (Ga,Cr)As;Physical Review B;2003-03-17
4. A study of the vacancy-defect distribution in a GaAs/AlxGa1−xAs multi-layer structure grown at low temperature;Journal of Crystal Growth;1999-01
5. High Sensitivity Convergent Beam Electron Diffraction for the Determination of the Tetragonal Distortion of Epitaxial Films;MRS Proceedings;1999
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3