EBIC mode characterization of transport properties on laser heterostructures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Temperature dependence of electron mobility in GaAs-Ga1−xAlxAs modulation-doped quantum wells
2. Interface roughness scattering in GaAs/AlAs quantum wells
3. Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique
4. Electron-hole scattering in GaAs quantum wells
5. Two‐dimensional exciton transport in GaAs/GaAlAs quantum wells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Multiple quantum well GaAs/AlGaAs solar cells: transport and recombination properties by means of EBIC and cathodoluminescence;Materials Science and Engineering: B;1999-12
2. Qualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced Current;Solid State Phenomena;1999-04
3. Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence;Microelectronics Journal;1999-04
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