Author:
Roberts Bruce W.,Luo Weiwei,Johnson Kurt A.,Clancy Paulette
Subject
Industrial and Manufacturing Engineering,General Chemical Engineering,Environmental Chemistry,General Chemistry
Reference43 articles.
1. Experimental evidence for a dual vacancy–interstitial mechanism of self-diffusion in silicon
2. Silicon Self-Diffusion in Isotope Heterostructures
3. Point defects and dopant diffusion in silicon
4. R.W. Dutton, A.G. Gonzalez, R.D. Rung, D.A. Antoniadis, in: H.R. Huff, E. Sirtl (Eds.), Semiconductor Silicon 1977, Proceedings of the Third International Symposium on Silicon Materials Science and Technology, The Electrochemical Society, Princeton, NJ, 1977, pp. 910–916
5. D.W. Yergeau, E.C. Kan, M.J. Gander, R.W. Dutton, in: H. Ryssel, P. Pichler (Eds.), Simulation of Semiconductor Devices and Processes, vol. 6, Springer, Wien, Austria, 1995, pp. 66–69
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