Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers-Reference-Cited by-同舟云学术

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Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers

Published:1998-12 Issue:1-4 Volume:80 Page:269-273
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Bratus' V.Ya.,Valakh M.Ya.,Vorona I.P.,Petrenko T.T.,Yukhimchuk V.A.,Hemment P.L.F.,Komoda T.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference11 articles.

1. Photoluminescence mechanism in surface-oxidized silicon nanocrystals

2. Quantum Confined Luminescence inSi/SiO2Superlattices

3. Photoluminescent spectrum and dynamics ofSi+-ion-implanted and thermally annealedSiO2glasses

4. Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .

5. Electron‐spin‐resonance evidence for an impurity‐relatedE’‐like hole trapping defect in thermally grown SiO2on Si

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1. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO2 -thin films;physica status solidi (c);2016-10-06

2. Blue photoluminescence from continuous freestanding β-SiC/SiOxCy/Cfree nanocomposite films with polycarbosilane (PCS) precursor;Optical Materials;2011-02

3. Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors;Journal of Applied Physics;2010-08-15

4. The influence of irradiation on the microhardness and photoluminescence of SiO2;Glass Physics and Chemistry;2006-10

5. Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2;Solid State Communications;2005-01

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