Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors-Reference-Cited by-同舟云学术

Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors

Published:2010-08-15 Issue:4 Volume:108 Page:043105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fernández A. A. González¹,Mijares M. Aceves¹,Sánchez A. Morales¹²,Leyva K. M.¹

Affiliation:

1. INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla 72000, Mexico

2. CNyN-UNAM, Apdo. 14, Ensenada B. C. 22800, Mexico

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3465335

Reference30 articles.

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2. J. A. Luna, “Investigación de las características estructurales, ópticas y eléctricas del SRO para su posible aplicación a dispositivos,” Ph.D. thesis, INAOE, 2007.

3. Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films

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