Polarization induced self-doping effects and p-n junctions in heterostructures based on F-GaN-H stacking-Reference-Cited by-同舟云学术

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Polarization induced self-doping effects and p-n junctions in heterostructures based on F-GaN-H stacking

Published:2023-01 Issue: Volume:145 Page:115498
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Wang Fangping,Li Enling,Cui Zhen,Shen Pengfei,Zhao Hongyuan,Shen Yang,Ma Deming

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference58 articles.

1. Electronic and optical properties of two-dimensional GaN from first-principles;Sanders;Nano Lett.,2017

2. Wafer-sized ultrathin gallium and indium nitride nanosheets through the ammonolysis of liquid metal derived oxides;Syed;J. Am. Chem. Soc.,2019

3. Growth of 2D GaN single crystals on liquid metals;Chen;J. Am. Chem. Soc.,2018

4. Two-dimensional gallium nitride realized via graphene encapsulation;Al Balushi;Nat. Mater.,2016

5. Tuning the electronic properties of hexagonal two-dimensional GaN monolayers via doping for enhanced optoelectronic applications;Alaal;ACS Appl. Nano Mater.,2018

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-doping effects and carrier mobility of the H-GaN-F and h-BN stacking hetero-structures;Materials Science in Semiconductor Processing;2024-05

2. Thermal conductivity at finite temperature and electronic structure of the ultra-wide band gap fluorinated 2D GaN;Journal of Physics: Condensed Matter;2023-09-27

3. Construction of two-dimensional lateral heterostructures by graphenelike ZnO and GaN monolayers for potential optoelectronic applications;Surfaces and Interfaces;2023-02

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