Simulation analysis of a novel fully depleted SOI MOSFET: Electrical and thermal performance improvement through trapezoidally doped channel and silicon–nitride buried insulator-Reference-Cited by-同舟云学术

Simulation analysis of a novel fully depleted SOI MOSFET: Electrical and thermal performance improvement through trapezoidally doped channel and silicon–nitride buried insulator

Published:2015-05 Issue: Volume:69 Page:27-33
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Shahnazarisani Hadi,Mohammadi Saeed

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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