First-principles study on the electronic and magnetic properties of InN nanosheets doped with 2p elements-Reference-Cited by-同舟云学术

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First-principles study on the electronic and magnetic properties of InN nanosheets doped with 2p elements

Published:2015-03 Issue: Volume:67 Page:1-6
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ren Miaojuan,Li Mingming,Zhang Changwen,Yuan Min,Li Ping,Li Feng,Ji Weixiao,Liu Xiaojing

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Technological Development Program in Shandong Province Education Department

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap;Davydov;Phys. Status Solidi B,2002

2. Unusual properties of the fundamental band gap of InN;Wu;Appl. Phys. Lett.,2002

3. Low-field and high-field electron transport in zinc blende InN;Polyakov;Appl. Phys. Lett.,2009

4. Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method;Chang;J. Vac. Sci. Technol. A,2007

5. Synthesis and optical properties of InN nanowires and nanotubes;Xu;Appl. Phys. Lett.,2007

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1. Dopant concentration dependent room temperature ferromagnetism in crystalline Sc doped AlN thin films;Journal of Alloys and Compounds;2023-10

2. Room temperature ferromagnetism and transport properties in InN/VTe2 van der Waals heterostructures;Applied Surface Science;2022-10

3. An investigation of vacancy defects on electronic and magnetic properties of TlN nanosheet: By density function calculation;Solid State Communications;2022-01

4. Strain tailored thermodynamic stability, electronic transitions, and optoelectronic properties of III (In, Ga and Al)-nitride monolayers;Nanotechnology;2021-11-05

5. The influence of N-vacancy on the electronic and optical properties of bulk InN nitrides;Materials Science and Engineering: B;2021-09

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