The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(311)B substrate-Reference-Cited by-同舟云学术

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The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(311)B substrate

Published:2010-09 Issue:10 Volume:42 Page:2768-2771
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Shoji Yasushi,Oshima Ryuji,Takata Ayami,Okada Yoshitaka

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Ultrafast optical switching with CdTe nanocrystals in a glass matrix

3. Quantum dot solar cells

4. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

5. Highly packed InGaAs quantum dots on GaAs(311)B

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-particle and collective excitations in quantum wires comprised of vertically stacked quantum dots: Finite magnetic field;Modern Physics Letters B;2020-12-23

2. Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness;Acta Materialia;2016-01

3. High-resolution X-ray diffraction in crystalline structures with quantum dots;Physics-Uspekhi;2015-05-31

4. Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT;Nanoscale Research Letters;2013-12

5. Quantitative analysis of the quantum dot superlattice by high-resolution x-ray diffraction;Journal of Applied Physics;2013-04-28

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