Electronic structure and optic absorption of phosphorene under strain
Author:
Funder
NSF of China
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
2. Black phosphorus field-effect transistors
3. Electric field effect in ultrathin black phosphorus
4. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
5. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
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1. Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain;Chinese Physics Letters;2024-03-01
2. Role of the band-gap parameter in the characterization of Landau levels in a gapped-phase semi-Dirac system: Monolayer phosphorene;Physical Review B;2023-03-21
3. Optical properties and polaritons of low symmetry 2D materials;Photonics Insights;2023
4. Spin dependent Goos–Hänchen-like effect in a strained phosphorene superlattice;Journal of Physics and Chemistry of Solids;2022-11
5. Half-metallicity in strained phosphorene nanoribbons;Physics Letters A;2022-10
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