Temperature dependence of the electron distribution in a GaAs matrix with embedded InAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Quantum Semiconductor Structures;Weisbuch,1991
2. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
3. Carrier relaxation and electronic structure in InAs self-assembled quantum dots
4. Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy
5. The dynamics of tunneling into self-assembled InAs dots
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2. Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements;Advances in Condensed Matter Physics;2012
3. Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells;Journal of Applied Physics;2011-04
4. Activation energies in diamond films evaluated using admittance spectroscopy and resistivity measurements;Journal of Applied Physics;2007-02
5. The temperature dependence of electrical and optical properties in InAs/GaAs and GaAs/InAs/AlAs self-assembled quantum dots;Semiconductor Science and Technology;2006-06-05
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