Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy-Reference-Cited by-同舟云学术

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Effect of interfacial strain on the formation of AlGaN nanostructures by selective area heteroepitaxy

Published:2008-01 Issue:3 Volume:40 Page:478-483
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Jindal Vibhu,Grandusky James,Jamil Muhammad,Tripathi Neeraj,Thiel Bradley,Shahedipour-Sandvik Fatemeh,Balch Joleyn,LeBoeuf Steven

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. The Blue Laser Diode—GaN based Light Emitters and Lasers;Nakamura,1997

2. A nanocluster route to zero‐ and one‐dimensional quantum structures by MOCVD

3. Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy

4. Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

5. Systematic Prediction of Kinetically Limited Crystal Growth Morphologies

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1. Core–shell GaN/AlGaN nanowires grown by selective area epitaxy;Nanoscale Horizons;2023

2. Nonpolar AlxGa1−xN/AlyGa1−yN multiple quantum wells on GaN nanowire for UV emission;Nano Research;2022-05-31

3. Effects of strain on various properties and applications on one-dimensional nano-/microstructures;Journal of Materials Science;2020-03-02

4. Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures;Journal of Electronic Materials;2018-08-13

5. Shape-controlled synthesis of one-dimensional AlxGa1−xN nanotower arrays: structural characteristics and growth mechanism;Journal of Physics D: Applied Physics;2014-01-20

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