Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams
2. High transconductance in‐plane‐gated transistors
3. Fabrication of in‐plane‐gate transistor structures by focused laser beam‐induced Zn doping of modulation‐doped GaAs/AlGaAs quantum wells
4. Nanomachining of mesoscopic electronic devices using an atomic force microscope
5. Ultrafast characterization of an in‐plane gate transistor integrated with photoconductive switches
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1. Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures;Japanese Journal of Applied Physics;2010-10-20
2. Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications;Nanotechnology;2010-01-18
3. In-plane gate transistors implanted with different channel geometries by focussed ion beam in positive mode pattern definition technique;physica status solidi (a);2010-01
4. A sequential logic device realized by integration of in-plane gate transistors in InGaAs∕InP;Applied Physics Letters;2008
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