InAs nanostructure grown with different growth rate in InAlAs matrix on InP substrate
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. InAs/GaAs quantum dots radiative recombination from zero-dimensional states
3. Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)
4. A Model for Strain-Induced Roughening and Coherent Island Growth
5. High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -
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1. Analysis of polarized light generation in anisotropic strained quantum dots;Journal of Computational Electronics;2017-06-19
2. Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates;Journal of Applied Physics;2009-12-15
3. Solvothermal synthesis of Group 13–15 chalcogenidometalates with chelating organic amines;Coordination Chemistry Reviews;2009-05
4. Strain-induced effects on optical properties of magnetized Stranski–Krastanov quantum dots;Nanotechnology;2007-07-13
5. Theoretical investigation of the effect of asymmetry on optical anisotropy and electronic structure of Stranski-Krastanov quantum dots;Physical Review B;2006-09-26
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